bd643 ? 645 ? 647 ? 649 ? 651 17/10/2012 comset semiconductors 1 | 5 semiconductors silicon darlington power transistors npn epitaxial-base transistors in a monolithic dalrington circuit and housed in a to-220 enveloppe. they are intended for output stages in audio equipment, general amplifiers, and analogue switching application. pnp complements are bd644, bd646, bd648, bd650 and bd652 compliance to rohs . absolute maximum ratings symbol ratings value unit v cbo collector-base voltage bd643 60 v BD645 80 bd647 100 bd649 120 bd651 140 v ceo collector-emitter voltage bd643 45 v BD645 60 bd647 80 bd649 100 bd651 120 v ebo emitter-base voltage bd643 5 v BD645 bd647 bd649 bd651 i c collector current bd643 8 a BD645 bd647 bd649 bd651 i cm collector peak current bd643 12 a BD645 bd647 bd649 bd651 www.datasheet.net/ datasheet pdf - http://www..co.kr/
bd643 ? 645 ? 647 ? 649 ? 651 17/10/2012 comset semiconductors 2 | 5 semiconductors absolute maximum ratings symbol ratings value unit i b base current bd643 300 ma BD645 bd647 bd649 bd651 p t power dissipation @ t mb < 25 bd643 62.5 watts BD645 bd647 bd649 bd651 t j junction temperature bd643 150 c BD645 bd647 bd649 bd651 t s storage temperature range bd643 -65 to +150 BD645 bd647 bd649 bd651 limiting values in accordance with the absolute maximum system (iec 134) thermal characteristics symbol ratings value unit r thj-mb from junction to mounting base 2 k/w r thj-a from junction to ambient in free air 62.5 k/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
bd643 ? 645 ? 647 ? 649 ? 651 17/10/2012 comset semiconductors 3 | 5 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current i e =0,v cb =v ceo max bd643 - - 0.2 ma BD645 bd647 bd649 bd651 i e =0,v cb =1/2 v cbo max t j =150c bd643 - - 2 ma BD645 bd647 bd649 bd651 i ceo collector cutoff current i e =0, v ce =1/2 v ceo max bd643 - - 0.5 ma BD645 bd647 bd649 bd651 i ebo emitter cutoff current v eb =5 v, i c =0 bd643 - - 5.0 ma BD645 bd647 bd649 bd651 v ceo collector-emitter breakdown voltage i c =30 ma, i b = 0 bd643 45 - - v BD645 60 - - bd647 80 - - bd649 100 - - bd651 120 - - v ce(sat) collector-emitter saturation voltage (*) i c =4 a, i b =16 ma bd643 - - 2 v i c =3 a, i b =12 ma BD645 - - 2 bd647 bd649 bd651 i c =5 a, i b =50 ma bd643 - - 2.5 BD645 bd647 bd649 bd651 v be(sat) base-emitter saturation voltage (*) i c =12 a, i b =50 ma bd643 - - 3 v BD645 bd647 bd649 bd651 www.datasheet.net/ datasheet pdf - http://www..co.kr/
bd643 ? 645 ? 647 ? 649 ? 651 17/10/2012 comset semiconductors 4 | 5 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v be base-emitter voltage (*) i c =4 a, v ce =3 v bd643 - - 2.5 v i c =3 a, v ce =3 v BD645 - - 2.5 bd647 bd649 bd651 h fe dc current gain (*) v ce =3.0 v, i c =0.5 a bd643 - 1900 - - BD645 bd647 bd649 bd651 v ce =3.0 v, i c =4 a bd643 750 - - v ce =3.0 v, i c =3 a BD645 750 - - bd647 bd649 bd651 v ce =3.0 v, i c =8 a bd643 - 1800 - BD645 bd647 bd649 bd651 h fe small signal current gain v ce =3.0 v, i c =4 a f=1mhz bd643 10 - - - v ce =3.0 v, i c =3 a f=1mhz BD645 10 - - bd647 10 - - bd649 10 - - bd651 10 - - (*) pulse width 300 s, duty cycle 2.0% www.datasheet.net/ datasheet pdf - http://www..co.kr/
bd643 ? 645 ? 647 ? 649 ? 651 17/10/2012 comset semiconductors 5 | 5 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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